I want to use the H-Bridge module shown in the attachment as a switch in a 12V DC circuit and would prefer if possible, for ease and simplicity, to use a full bridge gate driver such as the IRS2453DS [Data Sheet attached]. The H-Bridge comprises 4 IGBTs, rated for 75A, and the intention is for a very slow switching rate of 4 to 8Hz. From the data sheet [p.3], the gate capacitance of these IGBTs is about 4.3nF and gate charge 166nC. The saturation voltage is 15V and Vgs threshold is ~4V. (Gate-Source leakage current 120nA).
Because the switching rate is so slow -- on/off periods in the millisecond range --, my understanding so far is that the sink/source currents of this specific gate driver are sufficient to the gate capacitance involved. The bootstrap capacitor incorporated is 0.1 microF, well above the gate capacitance.
My question then is whether, broadly speaking (if such is even possible in electronics), this full bridge driver is even anywhere close to appropriate for such an application, and if not, why not? Any guidance would be much appreciated.
Because the switching rate is so slow -- on/off periods in the millisecond range --, my understanding so far is that the sink/source currents of this specific gate driver are sufficient to the gate capacitance involved. The bootstrap capacitor incorporated is 0.1 microF, well above the gate capacitance.
My question then is whether, broadly speaking (if such is even possible in electronics), this full bridge driver is even anywhere close to appropriate for such an application, and if not, why not? Any guidance would be much appreciated.
Attachments
-
1.4 MB Views: 24
-
509.4 KB Views: 16