With a reverse biased diode, the electrons get pushed from the - terminal towards the junction on P side and combine with holes near the junction, making the depletion layer increased on P side simultaneously the + terminal of the battery pulls the electrons into the + terminal leaving the N side of the junction increased as well with a bigger electric field.
My question, shouldn’t the depletion layer also increase in forward bias?
I imagine when - terminal on the N side pushes the electrons from the N side and over the junction into the holes on P side, it would recombine with the holes near the depletion layer and increase the depletion layer as well just like in reverse bias. And the same thing on the P side, + terminal pulling the electrons on P side leaving positive charges near the depletion later, hence increasing it.
My question, shouldn’t the depletion layer also increase in forward bias?
I imagine when - terminal on the N side pushes the electrons from the N side and over the junction into the holes on P side, it would recombine with the holes near the depletion layer and increase the depletion layer as well just like in reverse bias. And the same thing on the P side, + terminal pulling the electrons on P side leaving positive charges near the depletion later, hence increasing it.



