Curvy enough.hips, but a little short in the chest area.
Ian, I've been reading about JFETs and their characteristics curve (included photo here) for the "constant current" region of operation. That's the proper operation region for JFET amplification, and it's Nearly linear, and I'm Nearly certain of my understanding of that amplification function. By keeping the operational point (Q point) within the constant current region for all input Vgs: the drain current and V drain-resistor are nearly linear for all voltages of D to S, applied. I'm also certain you disagree, so I've included a photo of what I readLook up Erno Borberly if you are interested in FET amplifiers
https://audioxpress.com/article/The-All-FET-Line-Amp
Look up Erno Borberly if you are interested in FET amplifiers
https://audioxpress.com/article/The-All-FET-Line-Amp
I've seen that photo before - but I've never seen a graph like that on any real JFET datasheet. A real JFET has Gfs proportional to Id, so that Id varies as Vgs^2Ian, I've been reading about JFETs and their characteristics curve (included photo here) for the "constant current" region of operation. That's the proper operation region for JFET amplification, and it's Nearly linear, and I'm Nearly certain of my understanding of that amplification function. By keeping the operational point (Q point) within the constant current region for all input Vgs: the drain current and V drain-resistor are nearly linear for all voltages of D to S, applied. I'm also certain you disagree, so I've included a photo of what I read
Here's a similar curve from an EF80 datasheet. You can see that it's reasonably linear around Vgk=-1V, but the same effect occurs at grid voltages that become more negative.View attachment 258996
Your only way of achieving greater linearity is more gain and more feedback.
[/QUOTE. Ian let me review my books discussion of transconductance and the calculation of Siemens, because it seemed to me that there's an algebraic manipulation that relates the "&m" basic equation to ohm's law. If I can verify to myself the validity of that algebra, I'll walk you through it by later tonight. I might need to photo my steps leading to that conclusion so be aware of any attached file, in my discussion.
Ian, I've finished my algebra without good evidence of what I'm trying to support, but let me try another written attempt to relate the "&m" (Siemens) relation to "resistance" of the JFET channel that is somewhat proportional to the gate voltage of the input signal. I'll also include a better photo of the text so you can better understand my conclusions.Ian, let me review my
So very true! Creating the sound (music) is very much different than reproducing it. That opening chord sound does not need to be modified any more.Many instrumental pop musicians like amps and speakers with distortion because they like the sound of their instruments better.
Most people who listen to the music prefer amplifiers and speakers with minimum distortion, since they want to hear the music to sound as close to live as possible.
So using a FET in the instrument amplifiers might make sense to get the distortion the musicians desire.
It makes little sense to have that distortion in an amp to listen to that music, since that would just add more distortion.
Waiting for IanOIan, I've finished my algebra without good evidence of what I'm trying to support, but let me try another written attempt to relate the "&m" (Siemens) relation to "resistance" of the JFET channel that is somewhat proportional to the gate voltage of the input signal. I'll also include a better photo of the text so you can better understand my conclusions.
For an 2N5485 "ON CHARACTERISTICS" there a Zero-Gate-Voltage Drain Current listed as min. 4mAdc to max. 10mAdc range with 15Vds. My conclusion is that the resistance of the channel can be calculated to be between R=15V/4mA ohms and 15V/10mA ohms. And the transconductance of the 2N5475 varies from one to another FET, but within those min. max. calculated "channel resistances". And aren't those resistances essentially an ohm's law calculation, especially with note to ohm's law being a linear equation. The fact that gate voltage only partly controls drain current does indeed introduce a non-linear response of a FET, but above the max. pinch-off voltage (shown in that curve photo as 5 volts) 'isn't there' a nearly linear relationship of signal voltage to channel resistance and drain current??? It occured to me (like so many things do) that a voltage divider for 15Vsd biasing the gate of a 2N5475, the nonlinear control of the "channel resistance" or transconductance could be made linear. prrrtt!