Hey Guys,
I am doing a design revision on a quite powerful converter and here is my question.
There are these SiC MOSFETs that I need to drive. We are using IXDN630YI ICs for gate drive and in order to achieve fast turn off we are using anti parallel diodes to gate resistors. I need to make this circuit quite as compact and I could not think a good reason not to implement the same circuit as the second drive option, where I do not need the diodes for fast turn off. Am I missing something? Thank you for your time.

I am doing a design revision on a quite powerful converter and here is my question.
There are these SiC MOSFETs that I need to drive. We are using IXDN630YI ICs for gate drive and in order to achieve fast turn off we are using anti parallel diodes to gate resistors. I need to make this circuit quite as compact and I could not think a good reason not to implement the same circuit as the second drive option, where I do not need the diodes for fast turn off. Am I missing something? Thank you for your time.
