Dear members of the community! I am trying to investigate the use of SiC MOSFET as a HVDC connector (to connect and disconnect the HV bus and an inverter), and I was wondering if it is possible to omit snubbers and pre-charge circuit for the MOSFET by varying the gate resistor? Low space/weight is very important. Really appreciate if someone could explain what to consider and how to go forward with this. Thanks in advance!