I already have some experience working with H-Bridges, although I'm far from being an expert in the subject.
My question has to do with how to protect them from inductive loads. I can tell from the following diagram of a conventional low-side nFets and high-side pFets that their intrinsic diodes work together to protect the components from voltage spikes when the load is switched off. The circuit in question is using DMN2056U nFets and DMP2045UQ pFets. And both are rated at 20V drain to source, and 8V gate to source. Both transistors have a capacity of about 4 amps, continuous. The solenoid's impedance is 4.2 ohms.
I normally place a TVS diode of an adequate value (in this case, about 18V) in parallel with the solenoid coil, and it's been working fine for years now. But is it really necessary? Aren't the transistors' intrinsic diodes enough to protect the circuit? ...
And by the way, the solenoid's activation/deactivation period is about 5 seconds.
My question has to do with how to protect them from inductive loads. I can tell from the following diagram of a conventional low-side nFets and high-side pFets that their intrinsic diodes work together to protect the components from voltage spikes when the load is switched off. The circuit in question is using DMN2056U nFets and DMP2045UQ pFets. And both are rated at 20V drain to source, and 8V gate to source. Both transistors have a capacity of about 4 amps, continuous. The solenoid's impedance is 4.2 ohms.
I normally place a TVS diode of an adequate value (in this case, about 18V) in parallel with the solenoid coil, and it's been working fine for years now. But is it really necessary? Aren't the transistors' intrinsic diodes enough to protect the circuit? ...
And by the way, the solenoid's activation/deactivation period is about 5 seconds.