Good Day,
I have a question regarding gate to source threshold voltage of MOSFET. We were using MOSFET AUIRFP4568 and it has to be replaced now with IXTH150N15X4 in our 1 KW 24V 40A Inverter Application. As per datasheet IXTP MOSFET has lower VGSth as compared to AUIRF and at higher tempratures, the IXTP device VGSth is decreasing more rapidly as compared to AUIRFP. This makes this device more vulnerable against self turn on. However, this assessment is done only on the basis of datasheet information. What can be done in order to make concreate opinion about diffrence between VGSth of both MOSFETs. What kind of tests you will suggest to be carried out in lab in order to have a clear picture.
Below is information provided in datasheet and will wait for your valuable feedback.
Thanks in advance
Test conditions: ID=4mA
For IXTP device VGSth @ 25 °C is 3.5V & VGSth @ 120 °C is 2.45V
Down to 30% of initial value hence decreasing rapidly
For Infenion device VGSth @ 25 °C is 4.47V & VGSth @ 120 °C is 3.60V
Down to 20% of initial value hence less rapid decrease in VGSth as compared to IXTP MOSFET
I have a question regarding gate to source threshold voltage of MOSFET. We were using MOSFET AUIRFP4568 and it has to be replaced now with IXTH150N15X4 in our 1 KW 24V 40A Inverter Application. As per datasheet IXTP MOSFET has lower VGSth as compared to AUIRF and at higher tempratures, the IXTP device VGSth is decreasing more rapidly as compared to AUIRFP. This makes this device more vulnerable against self turn on. However, this assessment is done only on the basis of datasheet information. What can be done in order to make concreate opinion about diffrence between VGSth of both MOSFETs. What kind of tests you will suggest to be carried out in lab in order to have a clear picture.
Below is information provided in datasheet and will wait for your valuable feedback.
Thanks in advance
Test conditions: ID=4mA
For IXTP device VGSth @ 25 °C is 3.5V & VGSth @ 120 °C is 2.45V
Down to 30% of initial value hence decreasing rapidly
For Infenion device VGSth @ 25 °C is 4.47V & VGSth @ 120 °C is 3.60V
Down to 20% of initial value hence less rapid decrease in VGSth as compared to IXTP MOSFET