No. The circuit is intended to switch the VBAT to VDD_MAIN. But I did not consider the voltage drop of N-MOS. How to compensate it so I will have exactly 3.6V at VDD_MAIN?Do you expect an N channel MOSFET to be on with a negative Vgs?
Then you want to use a P channel MOSFET and ground the gate when you want the transistor turned on.No. The circuit is intended to switch the VBAT to VDD_MAIN. But I did not consider the voltage drop of N-MOS. How to compensate it so I will have exactly 3.6V at VDD_MAIN?
But I will not be able to use the Magnetic on switch then as to trigger the VBAT to VDD? and redirect the magnetic on output to IC.Then you want to use a P channel MOSFET and ground the gate when you want the transistor turned on.
You can't use an N MOSFET to do what you want. That would require a sufficiently large Vgs to turn the device on and have a low on resistance.But I will not be able to use the Magnetic on switch then as to trigger the VBAT to VDD? and redirect the magnetic on output to IC.
Hi Dennis,You can't use an N MOSFET to do what you want. That would require a sufficiently large Vgs to turn the device on and have a low on resistance.
by Duane Benson
by Jake Hertz
by Jake Hertz