I have doubt if High side switch is required then PMOS is preferred ,

Can we use NMOS instead of PMOS for high side switching ?
VDD = 5V and Gate = 3.3V from MCU with below schematic for my application ( my load is IC with 5V, 1A max)

Just attached random schematic from internet for reference.

 

Using an N-MOSFET as a high-side switch means it is operating as a source-follower.
Thus the source (load) voltage is always at least one Vgs threshold voltage below the gate voltage, and the MOSFET is never turned fully on.
For most switching applications you want the MOSFET to be fully on.

The only way to turn a high-side N-MOSFET fully on is to have the gate voltage be more than the threshold voltage above the drain voltage.
This can be done with a bootstrap driver if the load is being periodically switched on and off at frequent intervals (<10s or so).

 

High side switching won't work in your case. You don't have a high enough gate voltage.

Cropped, edited circuit in question: