So here's my question: Is the Vds limit related to how much of a given circuit's charge can be 'sunk into' the MOSFET rather than what voltage can be applied to the circuit in which the MOSFET appears? If so, is there a limit as to the voltage that can be applied to the entire circuit where the MOSFET appears, or is the voltage ceiling unlimited with tolerances only dependent on how much voltage is dropped across Drain-Source? If the circuit voltage is limited but the Vds limit isn't actually it, where do manufacturers specify this quantity?

I think your over thinking this.

The only thing "sunk into"(your terms) is the result of the Rds. The rest is just like it is going through a wire or other connection.

The Vds is limited inside the package of the device, something called the "die". A mosfet rated at higher value in the same package is only different inside by the size of the "die". The circuit voltage for the mosfet is specified in the data sheet by 'Vds'. And should be used conservatively, don't run it at the maximum value, electronic parts are always "derated".

if we place another device on the circuit with it?

That can be done but then your opening another can of worms that you aren't ready for. Pick a device that is suitable to the circuit to start with.

 

Incidentally, would this indicate that energy-consuming devices (like a lightbulb or a motor) are always designed to have higher resistances, or do design goals tend toward lower resistances, with the idea being to turn power dissipation into something useful, such as light or mechanical energy?

You are putting the cart before the horse.
The resistance is not arbitrary; the design goal is for a particular power and the resistance follows from that.
Thus a 10W lamp will have a resistance of 14.4Ω for operation at 12V, and a resistance of 1.44k for operation at 120V.

 

Thanks for all the replies!