Hi Eric,Hi Teddy,
With +11.82V on the Base and +16.37V on the Emitter it is reversed Biassed Off, not a voltage drop.
E
Hi E,Hi T,
If you have 16.25V on adp pin, I get the same as you for those voltages.
E
View attachment 303581
Hi E,
Hi E,hi T,
What is the function of the circuit?
E
Hi E,Hi T,
OK,
You mean the pda voltage is an output voltage, so why have you got 28V connected to that pda point?
I would expect the PD controller to be connected as the Load for the pda signal.
E
Hi E,Hi T.
Checking your circuit, the basic design is incorrect, when using an NMOS FET with those Source and Gate voltages
Is this a College or Homework assignment? Moderation.
Hi E,hi T,
Look at this clip from the datasheet,
To turn On the NMOS FET the Gate voltage has to be at least +1.3V with respect to the Source.
With a Source voltage of 28V, and the Gate with a +4.5v or 9.9V, it can never turn ON.
E
View attachment 303587
Hi E,hi T,
For the BC847B at 84mA with approx 21V, Collector to Emitter voltage is 0.084A *21V =1.75Watts, it will cook!
It's rated at 200 milliWatts.
E
View attachment 303591
Look at the currents on those lines -- they are in the range of 20 pA. That includes the gate pin of the FET.I am wondering about the BJT emitter voltage, refer to the green markers in the following simulate circuit.The other screenshot is the simulation result.
It seems like both FET and BJT worked in cut-off region, why there's a large voltage drop at emitter?
View attachment 303577
View attachment 303578