1) The structure of a BJT, why the base-emitter voltage(Vbe) be expected to be about .6-.7V, or the typical built-in voltage of a silicon diode?
2) Why, given base and collector currents that enter the BJT, the emitter current must be exiting the BJT and positive. What happens if this is not the case?
2) Why, given base and collector currents that enter the BJT, the emitter current must be exiting the BJT and positive. What happens if this is not the case?