Let’s say I have a transistor class A amplifier circuit using a depletion mode FET. I have the load and the source resistor values already picked out to provide the right amount of gain and the source resistor is cold biased to provide asymmetrical clipping. Now let’s say suddenly I must substitute my depletion FET for a similar enhancement type FET. When I set my gate bias up so that the Q point is in the middle of the active region, will that change the way the current drain and source resistors affect the gain of my circuit? Thanks.

 

Might be helpful if you post a schematic....



Regards, Dana.