I am interested in having someone design such a MOSFET circuit to generate current up to 300 to 600 A peak into an impedance of 50 mOhm and inductance of 100 nH at frequencies up to several hundred kHz. This is a paid assignment.

 

Let's see, P = I^2R = 600^2 * 0.05 = 18000W.

I think I will pass, that's a bit beyond my level of comfort.

Bob

 

One Mitsubishi 6-Pack, with all three (3) channels connected in parallel, in current sharing mode, acting as a single half-bridge, is a possibility.

Each channel ...
600 Amps Peak
300 Amps Continuous
Even if one channel turns on early, or one channel turns off late, that channel can momentarily carry the full 600 amp load.

Current Balancing via Temperature...
1.6 mOhms @ 25°C
3.0 mOhms @ 125°C <<< The hotter MOSFET will carry less amps

Effective Rds(on) is 0.5 mOhms = 1.6 mOhms / 3 channels
0.5 mOhms is 1% of the resistance of the 50 mOhm Load

Vdss = 150 Volts

Built-In thermistor to shutdown the device on Over-Temperature

Switching Speed ...
2 microseconds = ( Turn-On Delay + Turn-On Rise Time ) + ( Turn-Off Delay + Turn-Off Fall Time )
The Switching Losses must be computed at the max Switching Frequency
An appropriate Gate Drive IC must be added

https://www.mitsubishielectric-mesh.com/products/pdf/fm600tu-3a_e.pdf

 

CORRECTION; Sorry, my mistake. The quoted specs are for a 4 cycle tone burst at a repetition rate of 100 Hz. Thus, each portion of the bridge is on for 4 x 10 usec; 100 times a sec for a duty factor of under 0.5%.