Without doping you can't create junctions.the energy gap of semiconductor is very small,for Si Eg=1.1 eV and for Ge Egis =0.72 eV, then why a semiconductor is not provided with this small energy to make it behave like a metal?Then there should be no need of doping.
The whole point of using semiconductors is that we can easily create and control with precision doping the conduction, carrier mobility and ultimately the QM energy movement properties of the material atomic lattice structure when making electronic devices. You only need the lattice structure on one side of the interface with a free-electron metal on the other side to make conventional band-gap junction device. Because the mechanics of the creation and operation of the band-gap is not classical EM it's also possible to make devices with a free-electron metal oxides and insulators if the barrier is so thin that QM effects like tunneling dominate its operation.the energy gap of semiconductor is very small,for Si Eg=1.1 eV and for Ge Egis =0.72 eV, then why a semiconductor is not provided with this small energy to make it behave like a metal?Then there should be no need of doping.
the energy gap of semiconductor is very small,for Si Eg=1.1 eV and for Ge Egis =0.72 eV, then why a semiconductor is not provided with this small energy to make it behave like a metal?Then there should be no need of doping.
I would like to edit my question. I want to ask the energy gap of Si or Ge is so small.Why a small electric field ,say 5 eV can make the valence electrons move to conduction band?Why is it that once the electrons are in conduction band only then electric field can play the role?the energy gap of semiconductor is very small,for Si Eg=1.1 eV and for Ge Egis =0.72 eV, then why a semiconductor is not provided with this small energy to make it behave like a metal?Then there should be no need of doping.
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