Hello everyone, I’d like to compare the reverse recovery losses of two MOSFETs ( NVTFS010N10MCL and SiR510DP)

In the tables for the first MOSFET, the ‘*Body diode reverse recovery charge*’ is calculated under conditions IF = 20 A, di/dt = 100 A/μs, TJ = 25 °C … whereas in the tables for the second MOSFET, the conditions are IF = 8 A, di/dt = 300 A/s

But how can I make a comparison if the test used to determine Qrr is different?

This question also applies to parameters such as Trise and Tfall, where each MOSFET datasheet calculates them differently.

Moderators note : removed chrome extention from the links

 

we do not have access to files on your computer.
first one seem to be this:
https://www.vishay.com/docs/78251/sir510dp.pdf

 

we do not have access to files on your computer.
first one seem to be this:
https://www.vishay.com/docs/78251/sir510dp.pdf

Yes, just updated the main post