I know what memory retention generally means in electronics. I was comparing the datasheets of STM8S103F3 and STM8S003F3, and I saw this:
Memories (STM8S103F3)
• Program memory: 8 Kbyte Flash; data
retention 20 years at 55 °C after 10 kcycle
• Data memory: 640 byte true data EEPROM;
endurance 300 kcycle
• RAM: 1 Kbyte

Memories (STM8S003F3)
• Program memory: 8 Kbyte Flash memory; data
retention 20 years at 55 °C after 100 cycles
• RAM: 1 Kbyte
• Data memory: 128 bytes true data EEPROM;
endurance up to 100 k write/erase cycles

Here why is it given as after10k cycles and 100 cycles? I know that data retention degrades after cycling, but why is it given 'after'? Is this like what they observed in the testing?
And one more thing, as STM8S003F3's memory degrades after 100 cycles, compared to 10k cycles of STM8S103F3, is STM8S003F3 not suitable for development?

Thanks in advance

 

With the STM8S103F3 they did 10kcycles and after they cycled it they looked at the data retention.
Withe the STM8S003F3 they only did 100 cycles (don't know why) and then testet te data retention.

The datasheets do not say that one degrades after 100 cycles. They just statet the test scenario.

 

Here why is it given as after10k cycles and 100 cycles? I know that data retention degrades after cycling, but why is it given 'after'? Is this like what they observed in the testing?

The gate oxide has naturally occurring traps for holes and electrons. The stress of writing and erasing creates new traps. As a bit is written and erased, some of those traps capture electrons and increase the threshold voltage of the MOSFET. That reduces the voltage margin between a programed and unprogrammed bit.

Retention can be thought of as the ability to differentiate a programmed bit from one that's unprogrammed. Higher temperatures increase charge loss from the floating gate.

For EEPROM, the entire array is considered bad after the first bit failure.

And one more thing, as STM8S003F3's memory degrades after 100 cycles, compared to 10k cycles of STM8S103F3, is STM8S003F3 not suitable for development?

You didn't provide the datasheets, and I didn't bother to look for them, but I doubt that they used the word degrades.

The importance of cycle count depends on your application. EPROMs had a cycle lifetime of less than 100 and that didn't stop them from being used in countless applications.

 

Note the difference between Program Memory (flash) and Data Memory (EEPROM).
Data Memory (EEPROM) is normally used to retain user settings.
Program Memory (flash) is expected to be erased and written a small number of times during program development (and usually only once to write production firmware).

 

With the STM8S103F3 they did 10kcycles and after they cycled it they looked at the data retention.
Withe the STM8S003F3 they only did 100 cycles (don't know why) and then testet te data retention.

The datasheets do not say that one degrades after 100 cycles. They just statet the test scenario.

I figured this was it, thanks for the reassurance

 

The gate oxide has naturally occurring traps for holes and electrons. The stress of writing and erasing creates new traps. As a bit is written and erased, some of those traps capture electrons and increase the threshold voltage of the MOSFET. That reduces the voltage margin between a programed and unprogrammed bit.

Retention can be thought of as the ability to differentiate a programmed bit from one that's unprogrammed. Higher temperatures increase charge loss from the floating gate.

For EEPROM, the entire array is considered bad after the first bit failure.
You didn't provide the datasheets, and I didn't bother to look for them, but I doubt that they used the word degrades.

The importance of cycle count depends on your application. EPROMs had a cycle lifetime of less than 100 and that didn't stop them from being used in countless applications.

Thanks. I've attached the datasheets, don't bother looking as it does not mention any degradation as you said. It is my first time working with datasheets. Thanks a bunch!

 

It is my first time working with datasheets.

I've never seen a datasheet that gave reasons why devices like EEPROM, EPROM, and Flash wear out.