Just curious - are wafer die performance characteristics stable over temp and is it the package encapsulant that limits the performance characteristics over temperature? I have some encapsulated QFN parts rated to -40 C to +85C and want to characterize them at 100 C. Heat is not a factor in the part i want to take to temperature but it could be a factor for some parts. I can't get a straight answer from the application engineers. One suggested that the parts would survive but they had not characterized the part at 100 C. Fair enough. I will do so.But I am curious if there are other limiting factors.
The part in question is a DAC. It is rated for -40 to +85 and I need it to run at 100 C. Its thermal consumption is 1mW at full speed.
Any input appreciated.
The part in question is a DAC. It is rated for -40 to +85 and I need it to run at 100 C. Its thermal consumption is 1mW at full speed.
Any input appreciated.