Hello,
I have a question about SRAM cell's write operation. The attachment is an image from CMOS VLSI Design by Neil. What I understand so far is that , to write the SRAM cell, we need to set one bit line to the logic we want, and the other bit line to the complement of that logic.
Now I assumed that initially the SRAM cell stores Q = 0, so Qbar = 1. I want to write the data_s1 = 1 to Q. After I enable the write operation (set write_q1 to high), since Q1 and Q2 are both ON, it looks like I am trying to write logic "low" to Q instead.
My question is that if I want to write Q with some logic, will I always have to feed the complement of that logic to data_s1?
Thank You
I have a question about SRAM cell's write operation. The attachment is an image from CMOS VLSI Design by Neil. What I understand so far is that , to write the SRAM cell, we need to set one bit line to the logic we want, and the other bit line to the complement of that logic.
Now I assumed that initially the SRAM cell stores Q = 0, so Qbar = 1. I want to write the data_s1 = 1 to Q. After I enable the write operation (set write_q1 to high), since Q1 and Q2 are both ON, it looks like I am trying to write logic "low" to Q instead.
My question is that if I want to write Q with some logic, will I always have to feed the complement of that logic to data_s1?
Thank You
