Kind friends
As per the title, this is to inquire as to the reverse recovery time (Trr) of discrete EHT rectifiers marketed as semiconductor retrofits for high vacuum diodes applied to development of accelerating potential in CRT display systems...
Said data is annoyingly absent in the technical literature for said devices --- Although I had assumed the 'standard' 100ns typically applicable to low current (<100 mA) EHT rectifiers 'Speced' to VRRMs ≤ 50kV -- The drastically improved 30kHz+ performance witnessed with 'mainstream' "high frequency" EHT rectifiers (e.g. certain 'members' of the 100ns '2CLG' series) leaves me in doubt...
Granted! I could merely characterize them myself (and may yet need to do)
-- "Six-Figure Sad Experience", however, has led me to the philosophy that EHT and VLSI based instrumentation are straight up incompatible (HV Probes, etc... notwithstanding)!


Many advanced thanks for any info and/or insight!


Best regards
HP
PS
FWIW here are the 'sketchy' specifications and an image of a device typical of that in question:
Vrrm=45kV
If (Average) = 5 mA
If (Surge) = 1A

As per the title, this is to inquire as to the reverse recovery time (Trr) of discrete EHT rectifiers marketed as semiconductor retrofits for high vacuum diodes applied to development of accelerating potential in CRT display systems...
Said data is annoyingly absent in the technical literature for said devices --- Although I had assumed the 'standard' 100ns typically applicable to low current (<100 mA) EHT rectifiers 'Speced' to VRRMs ≤ 50kV -- The drastically improved 30kHz+ performance witnessed with 'mainstream' "high frequency" EHT rectifiers (e.g. certain 'members' of the 100ns '2CLG' series) leaves me in doubt...
Granted! I could merely characterize them myself (and may yet need to do)
Many advanced thanks for any info and/or insight!
Best regards
HP
PS
FWIW here are the 'sketchy' specifications and an image of a device typical of that in question:
Vrrm=45kV
If (Average) = 5 mA
If (Surge) = 1A

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