I am planning a simple power switch, which consist of P-CH mosfet and N-CH mosfet
This design should be a high-side switch and logically works
The only problem that i'm afraid of is the fact that MOTOR_PWR can reach 50V and the limitation of the Vgs of the MOSFET Q? is +-20V
When enabling GND on the Gate of Q? i guess that the Vgs that is meassured between Gate and Source is 50V which is greater then 20V
Is this wrong? What can i do to prevent this issue? I thought of using Zener diode but don't know exactly if it should help
I thought of using voltage divider by adding a resistor between the Gate of Q? and the Drain of Q6 so that the voltage on the Gate will not be 0v, and it will be less than (MOTOR_PWR-Vgs[th])
This design should be a high-side switch and logically works
The only problem that i'm afraid of is the fact that MOTOR_PWR can reach 50V and the limitation of the Vgs of the MOSFET Q? is +-20V
When enabling GND on the Gate of Q? i guess that the Vgs that is meassured between Gate and Source is 50V which is greater then 20V
Is this wrong? What can i do to prevent this issue? I thought of using Zener diode but don't know exactly if it should help
I thought of using voltage divider by adding a resistor between the Gate of Q? and the Drain of Q6 so that the voltage on the Gate will not be 0v, and it will be less than (MOTOR_PWR-Vgs[th])
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