If I understand this all correctly, semiconductors have a small bandgap which their electrons can overcome thru thermal excitations. When an electron jumps the gap, it creates two carriers, an electron and a hole.
Doping increases the carrier concentration by replacing an Si atom with B or P, which has either 3 or 5 electrons for P or N type doping.
If this is correct, then my question is why are the donor atoms treated as Si atoms within the lattice? In the case of B it has one less electron, but it also has one less proton, so shouldn't that yeild a different internal potential/orbitals and hence different interactions with the surrounding Si atoms? And if that takes place, wouldn't the surrounding Si atoms have their behavior change due to the decreased charge within the lattice?
Hopefully this question makes sense
Doping increases the carrier concentration by replacing an Si atom with B or P, which has either 3 or 5 electrons for P or N type doping.
If this is correct, then my question is why are the donor atoms treated as Si atoms within the lattice? In the case of B it has one less electron, but it also has one less proton, so shouldn't that yeild a different internal potential/orbitals and hence different interactions with the surrounding Si atoms? And if that takes place, wouldn't the surrounding Si atoms have their behavior change due to the decreased charge within the lattice?
Hopefully this question makes sense