Hello,
I would like to compute the minimum dead time for two power inverters, the first one is based on IGBT and the second one on MOSFET. I noticed that the switching parameters (Tdon, Tr, Tdoff and Tf) are defined as:
- Tdon: 10% of gate voltage to 10% of collector current
- Tr: 10% to 90% of collector current
- Tdoff: 90% of gate voltage to 90% of collector current
- Tf: 90% to 10% of collector current.
for IGBTs, and for MOSFETs as:
- Tdon: 10% of gate voltage to 90% of collector voltage
- Tr: 90% to 10% of collector voltage
- Tdoff: 90% of gate voltage to 10% of collector voltage
- Tf: 10% to 90% of collector voltage.
Why do we use the collector current for one technology, and the collector voltage for the other one? Can I estimate the switching parameters of an IGBT using the collector voltage?
Thanks in advance
I would like to compute the minimum dead time for two power inverters, the first one is based on IGBT and the second one on MOSFET. I noticed that the switching parameters (Tdon, Tr, Tdoff and Tf) are defined as:
- Tdon: 10% of gate voltage to 10% of collector current
- Tr: 10% to 90% of collector current
- Tdoff: 90% of gate voltage to 90% of collector current
- Tf: 90% to 10% of collector current.
for IGBTs, and for MOSFETs as:
- Tdon: 10% of gate voltage to 90% of collector voltage
- Tr: 90% to 10% of collector voltage
- Tdoff: 90% of gate voltage to 10% of collector voltage
- Tf: 10% to 90% of collector voltage.
Why do we use the collector current for one technology, and the collector voltage for the other one? Can I estimate the switching parameters of an IGBT using the collector voltage?
Thanks in advance