Hi all, question from somebody just starting to try to understand power electronics.
The basic specs of a power MOSFET are: Vdss(breakdown voltage) = 650V, Rds(ON)MAX= 99mOhms at 10V and IdMAX= 30A.
If the MOSFET was operating at maximum Vgs (30V by the specsheet), its ON resistance would be 99mOhms (probably lower but let's assume the spec sheet number for simplicity). If also I was pushing 30A through the MOSFET and assuming I am at the end of the linear region, would Vds be = Id x Rds(ON) = 30A x 0.099 = 2.97V?
If so, it seems strange to me that Vdss = 650V. Why that margin of 647V until breakdown?
Thanks!
The basic specs of a power MOSFET are: Vdss(breakdown voltage) = 650V, Rds(ON)MAX= 99mOhms at 10V and IdMAX= 30A.
If the MOSFET was operating at maximum Vgs (30V by the specsheet), its ON resistance would be 99mOhms (probably lower but let's assume the spec sheet number for simplicity). If also I was pushing 30A through the MOSFET and assuming I am at the end of the linear region, would Vds be = Id x Rds(ON) = 30A x 0.099 = 2.97V?
If so, it seems strange to me that Vdss = 650V. Why that margin of 647V until breakdown?
Thanks!