So I designed a circuit to drive mosfets through which high powered devices will be connected to.
These devices are mainly a led bar of (24 V, 3 A), a high powered relays (24 V, 30 A) and a dc motor (12 V, 30 A) in my lab.
The low side gate driver I choose is the UCC27517DBVT and it will be controlled by a microcontroller such as the arduino. The LED bar will be driven with pwm and the relay as a switch.
One of my concerns was the choice of mosfet I made, knowing that the one selected only dissipates 26 W and that the vgs optimal for a low RDS On is 10V and full current of ID = 40 A.
Basically I'd like to get feedback to know if these circuits need to be modified or if they are over engineered for the purpose of device control and flexibility.
Thanks !


These devices are mainly a led bar of (24 V, 3 A), a high powered relays (24 V, 30 A) and a dc motor (12 V, 30 A) in my lab.
The low side gate driver I choose is the UCC27517DBVT and it will be controlled by a microcontroller such as the arduino. The LED bar will be driven with pwm and the relay as a switch.
One of my concerns was the choice of mosfet I made, knowing that the one selected only dissipates 26 W and that the vgs optimal for a low RDS On is 10V and full current of ID = 40 A.
Basically I'd like to get feedback to know if these circuits need to be modified or if they are over engineered for the purpose of device control and flexibility.
Thanks !

