- Joined Jan 5, 2016
I have a low voltage, high peak power device that I want to protect from reverse polarity. I was going to bias a MOSFET in the usual direction (as in pic) but discussions online suggest biasing so that the body diode (not shown) is forward biased. Can anyone give any indication of the merits of the alternative? To keep my pic simple I tidied the Gate to +Vcc, but in reality I'll have a ~10V source available to ensure the FET is hard on and can handle 30A+ with ~0.3V drop across D-S.
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