- Joined Sep 24, 2015
Its basically a hybrid Szicklai pair - a regular MOSFET has an emitter follower strapped to its drain.
"In essence, the IGFET controls the base current of a BJT, which handles the main load current between collector and emitter. This way, there is extremely high current gain (since the insulated gate of the IGFET draws practically no current from the control circuitry), but the collector-to-emitter voltage drop during full conduction is as low as that of an ordinary BJT." Quoted from Bertus' posting.Does this page from out eBook make things more clear?
Its both - 2 devices on one die. A MOSFET and a bipolar transistor connected together.So is it more like a B(ipolar)J(unction)T(transistor) or a FET? I recognize the gate is insulated, so it can't be a BJT, there's no "Junction" between the Base & Emitter. Or collector for that fact.
Its not a Darlington - its different - that's why it has a different name; The Szicklai pair, in this case a hybrid Szicklai pair with a MOSFET and a BJT.think of it as a Darlington where the input is a MOSFET gate (high impedance voltage controlled) and the output is a BJT (actually better for very high currents than MOSFET).
Not necessarily - The output stage BJT can't saturate, so the on time losses aren't *ALL THAT* less than the RDSon of the older MOSFETs it was developed to replace.think of it as a Darlington where the input is a MOSFET gate (high impedance voltage controlled) and the output is a BJT (actually better for very high currents than MOSFET).
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