How can i find the ratio (W/L) for n-channel JFET with given turn off voltage Vt=-2 and channel condactance 0.1S
Assume that the gate diffusion forms a step junction with an epitaxial phosphorous layer of
Nd= 2x1015 atoms/cm3
and boron Na=1x1018 atoms/cm3.
I found built in potential Qi=0.77 to find channel thicknes then
t=1.3392E-4
Channel conductance =(W/L)*q*Un*Nd*t { is it the right equation to find the ratio?i choose Un for phosphrouos =1374 } because i found the ratio = 1697.3 }
.
Assume that the gate diffusion forms a step junction with an epitaxial phosphorous layer of
Nd= 2x1015 atoms/cm3
and boron Na=1x1018 atoms/cm3.
I found built in potential Qi=0.77 to find channel thicknes then
t=1.3392E-4
Channel conductance =(W/L)*q*Un*Nd*t { is it the right equation to find the ratio?i choose Un for phosphrouos =1374 } because i found the ratio = 1697.3 }
.
