I want to design a high side switch which uses IR2125. IR2125 is used to drive a N-Channel Power MOSFET.
I have read the following articles:
Using The Current Sensing IR212X Gate Drive ICs
http://www.irf.com/technical-info/appnotes/an-1014.pdf
Programmable High Side Current Switch IR3310/11/12
http://www.irf.com/technical-info/appnotes/an-1058.pdf
I am using the same circuit as described in the above articles (bootstrap circuit with high side switching). I am finding it difficult to protect the IGBT (110V DC connected) from short circuit at the output. My IGBT as well as the IR2125 are going bad.
Can someone plz help
Give me a solution
I have read the following articles:
Using The Current Sensing IR212X Gate Drive ICs
http://www.irf.com/technical-info/appnotes/an-1014.pdf
Programmable High Side Current Switch IR3310/11/12
http://www.irf.com/technical-info/appnotes/an-1058.pdf
I am using the same circuit as described in the above articles (bootstrap circuit with high side switching). I am finding it difficult to protect the IGBT (110V DC connected) from short circuit at the output. My IGBT as well as the IR2125 are going bad.
Can someone plz help
Give me a solution