Can someone please clarify any misconceptions I have about how IC sensors work?
I have to give a presentation on a TI temperature sensor tomorrow and I want to make sure I understand everything so I will try to summarize what I know below.
The principle of the IC temperature sensor is that the forward voltage of a silicon diode, which may be the base-emitter junction of a bipolar junction transistor (BJT), is temperature dependent. A change in ambient temperature, alters the band gap of the P-N junction (e.g. diode), and therefore directly effects how much electrons and holes are transferred through diffusion, This charge transfer is what effects the voltage difference between two diodes and is proportional to the absolute temperature.
Am I mostly correct in my explanation?
I have to give a presentation on a TI temperature sensor tomorrow and I want to make sure I understand everything so I will try to summarize what I know below.
The principle of the IC temperature sensor is that the forward voltage of a silicon diode, which may be the base-emitter junction of a bipolar junction transistor (BJT), is temperature dependent. A change in ambient temperature, alters the band gap of the P-N junction (e.g. diode), and therefore directly effects how much electrons and holes are transferred through diffusion, This charge transfer is what effects the voltage difference between two diodes and is proportional to the absolute temperature.
Am I mostly correct in my explanation?