Hello guys,
I am a beginner with hspice I would request all of you to help me with this problem. I want to simulate Ids vs. Vds for Vgs = 0, -0.2, -0.4 for a nMOS transistor in a 65 nm process with W/L = 120 nm/80 nm. The maximum value of V ds is 1.0V.
Kindly let me know how to go on with programing this problem.
Any help would be appreciated.
I am a beginner with hspice I would request all of you to help me with this problem. I want to simulate Ids vs. Vds for Vgs = 0, -0.2, -0.4 for a nMOS transistor in a 65 nm process with W/L = 120 nm/80 nm. The maximum value of V ds is 1.0V.
Kindly let me know how to go on with programing this problem.
Any help would be appreciated.
