Thanks a lot @Ian0. But is there any theoretical calculation for R2?R3=(Vpsu-Vled)/Iled
Vled is the forward voltage drop of the LED which will be in its datasheet, and varies from 1.2V for an Infrared type to 3.2V for a blue.
Iled is your choice, but choose something less than the maximum value in the datasheet.
R2 is large. Its only job is to make sure that the MOSFET stays off if the input signal is lost. Anywhere between 10k and 1M will work.
R1 is small. 10Ω to 100Ω. Its main purpose is to prevent parasitic oscillations. It will slow down the switching, but that is only important if you are switching at a high frequency, and then you might have to work it out based on the MOSFET gate charge, or gate-source capacitance.
Not really.Thanks a lot @Ian0. But is there any theoretical calculation for R2?
Thank YouNot really.
10k feels about right, because a much lower value (100Ω) would attenuate the gate drive voltage, and a much higher value (1M) would probably allow it to pick up some interference.
Actually, a mosfet is a voltage driven device. R1 and R2 together form a voltage divider. The voltage at the junction of R1/R2 (and therefore, the mosfet gate) should not be less than the mosfet's VGS(th), or the mosfet will never turn on.Thanks a lot @Ian0. But is there any theoretical calculation for R2?
Thank You so much... This is a valuable info..R3 is simply so the LED doesn't over-current and kill itself. When the transistor is fully-on, it's resistance will be insignificantly low for this particular circuit. This is listed as "Rds on" in the transistor datasheet and will be a fraction of an ohm for most parts. More info here (click).
You would pick R1 and R2 based on how fast you need to be able to turn it on and off. The gate has capacitance, so your R1 needs to be small enough that the gate can fully charge within the required turn-on time, and R2 must be small enough that the gate can be discharged within the required turn-off time.
If this is just an example for fun then the turn-on time really doesn't matter, just choose R1 and R2 such that the gate can full turn on and off without wasting too much current. For example if R1 was 1 and R2 was 100, it would operate just the same, except you would be wasting a ton of power (and heat). Or you could make R1 10k and R2 1M. It would still function, but this might actually be a high enough R2 that you may be able to see the turn-off delay with your eyes, it would be a cool thing to try on the bench.
Imagine that you need to turn it on and off at 1MHz. Now all of a sudden the capacitance of the gate is very significant, and your choices for R1 and R2 become much more important. So if we need it to turn on super fast, why have an R1 at all? R1 helps dampen any oscillations, so you don't get ringing on the gate. Here's a read on it by Toshiba (pdf).
Thank You.Actually, a mosfet is a voltage driven device. R1 and R2 together form a voltage divider. The voltage at the junction of R1/R2 (and therefore, the mosfet gate) should not be less than the mosfet's VGS(th), or the mosfet will never turn on.
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