I'm starting on a design where capacitors and diodes must be made from transistors. I know diodes can be made from connecting the gate to the drain (like in a current mirror), but what about a MOS capacitor?
From searching around, I've found that shorting the drain and source together and using them as one terminal, along with the gate as the other makes a capacitor. Am I correct in assuming the oxide capacitance/area (C_ox) multiplied by the area (width and length of the device) determines its capacitance? What other factors are involved?
Also nagging me: how does current flow through the device if the gate oxide is an insulator?
From searching around, I've found that shorting the drain and source together and using them as one terminal, along with the gate as the other makes a capacitor. Am I correct in assuming the oxide capacitance/area (C_ox) multiplied by the area (width and length of the device) determines its capacitance? What other factors are involved?
Also nagging me: how does current flow through the device if the gate oxide is an insulator?