Hello, I'm trying to understand the use of a HEMT as a power amplifier. I want to design a driver for a power amplifier and so I need to deliver enough current to charge the gate capacitance. I wanted to know if there is any other current I should take into consideration.
For instance, the gate contact is a Schottky one, if forward biased, it will "absorb" some current. How can I know how much current it would absorb?
I've also found this graph ( source : Reliability modeling of high voltage AlGaN/GaN and GaAs field-effect transistors)
why is there this decrease in the current close to 14dBm before it increases? What could be the physical explanation for that?
And last, I will be biasing my gate with a DC voltage and once the HEMT is on, the RF signal will be introduced. Will it affect the gate current in some way?
Thank you in advance
For instance, the gate contact is a Schottky one, if forward biased, it will "absorb" some current. How can I know how much current it would absorb?
I've also found this graph ( source : Reliability modeling of high voltage AlGaN/GaN and GaAs field-effect transistors)
why is there this decrease in the current close to 14dBm before it increases? What could be the physical explanation for that?
And last, I will be biasing my gate with a DC voltage and once the HEMT is on, the RF signal will be introduced. Will it affect the gate current in some way?
Thank you in advance