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Hello everyone!
Due to very low leakage current requirements, in nA range, and high voltage of around 100V, I cannot use normal ESD diodes for protection.
So, I was looking at Avalanche transistor and wanted to use its collector-base junction as a ESD diode. I came across FMMT41x series of avalanche transistors.
I used FMMT415 with base-emitter tied together, giving me a breakdown voltage of 100V across C-B junction (atleast thats how I interpreted the Vceo = 100V in datasheet).
In spice simulations, when I give Vce = 98V I am getting collector current of 30Amps!!!
To verify again, I gradually increased the Vce from 0V to 100V, and now I am getting Ic in nA....not sure why the difference!
My question to you all is:
I am struggling and could not find much about avalanche transistors, let alone for my application...any help in this case would be very nice
Link for datasheet and spice model: Avalanche Transistors
Due to very low leakage current requirements, in nA range, and high voltage of around 100V, I cannot use normal ESD diodes for protection.
So, I was looking at Avalanche transistor and wanted to use its collector-base junction as a ESD diode. I came across FMMT41x series of avalanche transistors.
I used FMMT415 with base-emitter tied together, giving me a breakdown voltage of 100V across C-B junction (atleast thats how I interpreted the Vceo = 100V in datasheet).
In spice simulations, when I give Vce = 98V I am getting collector current of 30Amps!!!
To verify again, I gradually increased the Vce from 0V to 100V, and now I am getting Ic in nA....not sure why the difference!
My question to you all is:
- Why is the same Vce giving very different Ic?
- Is this the right way to use the avalanche transistor for my use-case?
I am struggling and could not find much about avalanche transistors, let alone for my application...any help in this case would be very nice
Link for datasheet and spice model: Avalanche Transistors
