My project is an ARM board to be used on a cube satellite. Due to high radiation levels, we require a reliable way to detect and correct latch-up errors in memory. This is easily done with a current sensor as most manufacturers specify the latch-up current for memory chips. We have selected current sensors (INA226AIDGST) that have a software-configurable current threshold. If a high current is detected, an open drain interrupt pin will give a low signal. This interrupt should cause a high side PMOS to be switched off as fast as possible (5 usec would be competitive). This PMOS should remain off for a minimum amount of time (50 to 200 msec). We are considering using a bipolar 555 timer which should be reasonably radiation tolerant. The problem is, my group has limited experience with 555 timers. If someone has some idea of how to achieve what I have described, please share it. Thanks in advance.

 

The low signal on the interrupt pin could easily be used to start a 555-based 200mS timer whose high output would (with a bit of help) turn off the PFET. I have no idea how reliable a 555 would be under intense radiation though.

I'm curious as to why you choose a bipolar 555 rather than a CMOS one, considering that the current sensor contains MOS devices?

 

One thing I thought of out driving this morning was simply removing the power from the memory chip may not reset from the latch-up. This is due to built-in diodes on many pins to protect from ESD hits on the lines themselves. It is entirely possible to power on a chip (especially CMOS) thru an input set to high while no Vdd is connected.

Aside: I'm not convinced you actually need the 555 chip: The INA226AIDGST may be able to drive the MOS pass element itself, and provide a delay by a simple RC network. However, my muse is silent as to the practicable parts such as where that RC is actually connected.