Hi Guys,
Little confusion in Silicon and Schottky.
1N4007 - https://www.vishay.com/docs/88503/1n4001.pdf
SB180 - https://www.diodes.com/assets/Datasheets/ds30116.pdf
The junction capacitance of silicon diode 1N4007 is (Cj) 15pF
The junction capacitance of schottky diode SB180 is (Cj) 80pF
Both diodes did not specified the trr (reverse recovery time ) in datasheet.
why SB180 is called fast switching rectifier diode while 1N4007 is general purpose low frequency diode ?
Guys can you help me to understand which parameter should i look to decide the switching speed of the diode ?
Thanks in Advance !
Little confusion in Silicon and Schottky.
1N4007 - https://www.vishay.com/docs/88503/1n4001.pdf
SB180 - https://www.diodes.com/assets/Datasheets/ds30116.pdf
The junction capacitance of silicon diode 1N4007 is (Cj) 15pF
The junction capacitance of schottky diode SB180 is (Cj) 80pF
Both diodes did not specified the trr (reverse recovery time ) in datasheet.
why SB180 is called fast switching rectifier diode while 1N4007 is general purpose low frequency diode ?
Guys can you help me to understand which parameter should i look to decide the switching speed of the diode ?
Thanks in Advance !