I would like to ask if we can calculate the switching losses of an MOSFET using same formulas and methodology with which switching losses of an IGBT is calculated for same application? If yes then how we can do that because there is no RDSon in IGBTs while in MOSFETs RDSon primarily contributes to the losses. If some one can give me some leads to that so that i can take that as starting point.

Thanks