I'm currently trying to have a PIR motion sensor (HC-SR501, Datasheet) connected to a microcontroller being able to be switched on and off to save power consumption in busy areas. I propose to have the sensor on throughout the night and off in the day, this will stop the power consumption going through the roof when its not needed to know if there is any motion detected.
I have setup the above on a breadboard and i observe the following;
1. While the gate is pulled low (GND), the sensor is alternating between a HIGH and LOW output, false triggering.
2. While the gate is pulled high (5V), the sensor is not responding at all, as expected when using an N-Channel MOSFET configuration.
I am speaking to someone who claims that using a P-Channel MOSFET in a low side configuration is working for him, and he prefers to use a Low Side Switching P-Channel design over a High Side Switching N-Channel design.
I'm finding it very very hard to get my hands on a P-Channel logic level MOSFET in the UK for a small purchase. I can get them from places such as Farnell but there is a handling fee unless i spend over £20, which i think i have no choice to do.

I have setup the above on a breadboard and i observe the following;
1. While the gate is pulled low (GND), the sensor is alternating between a HIGH and LOW output, false triggering.
2. While the gate is pulled high (5V), the sensor is not responding at all, as expected when using an N-Channel MOSFET configuration.
I am speaking to someone who claims that using a P-Channel MOSFET in a low side configuration is working for him, and he prefers to use a Low Side Switching P-Channel design over a High Side Switching N-Channel design.
I'm finding it very very hard to get my hands on a P-Channel logic level MOSFET in the UK for a small purchase. I can get them from places such as Farnell but there is a handling fee unless i spend over £20, which i think i have no choice to do.