Hello everyone, I have a question about the N channel MOSFET SOI N, how is the device bulk polarized?

 

I'm not sure I understand what you mean by bulk polarization. The diagram looks a bit strange as well. Is it the case the p-material has completely pinched off the N-channel between the Source(Fonte) and the Drain(Dreno). Are you perhaps talking about the doping of semiconductor materials by diffusing materials from groups III and V of the periodic table to replace the silicon atoms?

 

I'm not sure I understand what you mean by bulk polarization. The diagram looks a bit strange as well. Is it the case the p-material has completely pinched off the N-channel between the Source(Fonte) and the Drain(Dreno). Are you perhaps talking about the doping of semiconductor materials by diffusing materials from groups III and V of the periodic table to replace the silicon atoms?

iso = silicon oxide is an insulator. Another kind of mosfet. Where is the substrate I should insert to ground or VCC?

 

No idea what you are talking about.

 

Na foto está escrito VG2. Existe um terminal.

Aí insiro uma fonte positiva (VCC) ou GND?
Espero que esteja claro.

 

Na foto está escrito VG2. Existe um terminal.

Aí insiro uma fonte positiva (VCC) ou GND?
Espero que esteja claro.

Sorry I don't see a termina VG2
Where you connect Vcc or GND depends on the circuit. If we are using the MOSDET as an amplifier we have the Common Drain, the Common Source, and the Common Gate configurations. Which one are you interested in?

Writing questions in Portugese is not helpful since I don't speak that language.

 

O objetivo é usar com o mosfet como amplificador uma configuração clássica do mesmo, mas usando o ISO mosfet. O problema é VG2.

 

The picture was so small it looked like Vss which is a common indication for GND. I don't know what you are asking and I usually work with schematic symbols, not silicon fabrication diagrams. So I'm going to wait for somebody else who can help you because we are just not communicating.