Hey! I'm doing a lab assignment and need some guidance.
i have measurement with L=1μm and w=10μm, but the id data is normalized to w=1μ, what does it mean?
do I need to get Ids "un-normalized" for extraction, like Ids*1e-6= new Ids
the second question is about low-field mobility, does the low-field mobility μ0 equal for all NMOSFETs? the BSIM guide Iam using have default value is 670 cm^2/Vsec for NMOSFET. but the extracted value is like 200cm^2/Vsec, I'm confused.
Thanks in advance
i have measurement with L=1μm and w=10μm, but the id data is normalized to w=1μ, what does it mean?
do I need to get Ids "un-normalized" for extraction, like Ids*1e-6= new Ids
the second question is about low-field mobility, does the low-field mobility μ0 equal for all NMOSFETs? the BSIM guide Iam using have default value is 670 cm^2/Vsec for NMOSFET. but the extracted value is like 200cm^2/Vsec, I'm confused.
Thanks in advance
