Hey all, I just learnt MOSFETS and I'm trying to work out my first problem, however I am finding it difficult on finding ID. Am I missing something very obvious?

The question goes like this:
Consider the circuit of Figure 1, where VDD = 10 V, RG1 = 10 MΩ, RG2 = 10 MΩ, RD = 5 kΩ, RS = 5 kΩ, (W/L) = 5. Determine the current ID and the voltages at the three transistor terminals and hence show that the transistor is biased in the pinch-off region. Neglect channel-length modulation effect.

I apologize if its a very easy question, as I said its my first MOS worked example.

Thanks!

 

You can't calculate anything without the MOSFET Specification-Sheet,
and even then, that would be only a "close" estimate.
.
.
.

 

Hey all, I just learnt MOSFETS and I'm trying to work out my first problem, however I am finding it difficult on finding ID. Am I missing something very obvious?

The question goes like this:
Consider the circuit of Figure 1, where VDD = 10 V, RG1 = 10 MΩ, RG2 = 10 MΩ, RD = 5 kΩ, RS = 5 kΩ, (W/L) = 5. Determine the current ID and the voltages at the three transistor terminals and hence show that the transistor is biased in the pinch-off region. Neglect channel-length modulation effect.

I apologize if its a very easy question, as I said its my first MOS worked example.

Thanks!

I forgot to mention that Vt = 0.8 and W/L = 5. These values where given

 

You can't calculate anything without the MOSFET Specification-Sheet,
and even then, that would be only a "close" estimate.
.
.
.

I forgot to mention that Vt = 0.8 and W/L = 5.

 

You still need either a device datasheet or a few more device parameters for an integrated device. This is from the Wikipedia page: