I am hoping to drive ~100 N-channel MOSFETs (https://www.diodes.com/assets/Datasheets/DMN63D8L.pdf) directly from a 3.3V logic-level PIC pin which can sink/source up to 18mA (PIC24FV32KA304). I would like to find out how many of these particular FETs I can drive with a since 18mA pin. These wouldn't be used as high-speed switches: they'd be ON or OFF for the duration of usage, never switching rapidly.
The gate resistance specified in the datasheet is at 1MHz and looks unhelpful for my purposes, since my switching frequency is effectively 0Hz. I would have expected a gate resistance in the M-ohm range. What I have done is to use the gate-source leakage current (Igss), which is listed as 10uA @vgs = 20V, and used those numbers to calculate a steady-state gate resistance of 2M-ohm. Then driving that gate at 3.3V, gives me a current of 1.65uA, or a maximum fanout of approximately 10909 of these FETs. Is this the correct approach?
The gate resistance specified in the datasheet is at 1MHz and looks unhelpful for my purposes, since my switching frequency is effectively 0Hz. I would have expected a gate resistance in the M-ohm range. What I have done is to use the gate-source leakage current (Igss), which is listed as 10uA @vgs = 20V, and used those numbers to calculate a steady-state gate resistance of 2M-ohm. Then driving that gate at 3.3V, gives me a current of 1.65uA, or a maximum fanout of approximately 10909 of these FETs. Is this the correct approach?