calculate anda plot the forward current voltage characteristics of a p-n silicond diode at T=300K,taking into account the recombination current in the depletion region.Use the following parameters Na=10^17 (cm)^-3,Nd=10^15 (cm)^-3,Eg=1.12 eV,Nc=3.22*(10)^-19 (cm)^-3,ε=1.054*(10)^-10 F/m,Device area is s=(10)^-4 (m)^2 , μp=0.04 (m^2/Vs) and μn=0.1 and τ=10^-8 s.