hi all, i'm using 180nm TSMC technology...for me to operate the device as short channel device, what will be min and max values of W, L i can use for that device?
If my design required W, which exceeds this limit, can i have MOS in parallel, so that my W is increased? What other parameters are affected if i connect MOS in parallel?
If my design required W, which exceeds this limit, can i have MOS in parallel, so that my W is increased? What other parameters are affected if i connect MOS in parallel?
