Hi I am considering purchasing the only available germanium diode available at my local shops (NTE 1n34a point contact) for use in the detector stage of radio receiver.
The datasheet specifies a Vf of 1v(max) @ 5ma and provides no graphs and does not provide other parameters such as reverse recovery time. I've noticed datasheets from NTE (a common supplier in my area) always have very basic datasheets which appear to be missing parameters common in other manufacturers datasheets.
I assumed any germanium diode would be superior to a silicon regarding Vf for a detector stage.. the datasheet for the 1n34a says its meant for RF but I can't really distinguish it from a silicon via its datasheet.
I've included the datasheet, thoughts? And how might this compare to a diode such as 1n4148?
The datasheet specifies a Vf of 1v(max) @ 5ma and provides no graphs and does not provide other parameters such as reverse recovery time. I've noticed datasheets from NTE (a common supplier in my area) always have very basic datasheets which appear to be missing parameters common in other manufacturers datasheets.
I assumed any germanium diode would be superior to a silicon regarding Vf for a detector stage.. the datasheet for the 1n34a says its meant for RF but I can't really distinguish it from a silicon via its datasheet.
I've included the datasheet, thoughts? And how might this compare to a diode such as 1n4148?
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