As long as the device fits the other requirements, why does the process used matter?Hi, I am looking for a switch to be designed in 150 nm process technology node that can carry a current if up to 4A. Hence, I need it to be of very low impedance. What is the lowest achievable impedance at that process node for a mosfet based switch?
I don't see why it wouldn't be. To get low on resistance and handle a largish current, you need a larger device. The process data will tell you how many microns of width you need for the current you want. Satisfying the current/micron requirement may give you the on resistance you want. If not, the device needs to be even larger. If you have the area, there's no problem.The voltage drop acceptable is maximum of 10%. This means the impedance of the switch can be 20m ohm. Is it practical to have such a switch at 150 nm technology process node?
This reminds me of Jim Williams zoo circuit. The client was insistent that it used CMOS technology because "the low power requirement is nonnegotiable". Jim designed it with nearly all bipolar components (a single cmos inverter being the exception) and still met the requirements. I love his recollection - "I'm fairly certain the customer wouldn't mind if I had used 12AX7's as long as it met specifications. It runs well in production, and they make lots of them, which makes my boss and the stockholders happy."As long as the device fits the other requirements, why does the process used matter?
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