hello

I conducted a simulation to check the linearity between the drain and source when the general mosfet is on-state.

As shown in the figure below, a simple circuit was constructed to apply power up to 40dBm. However, when the input power was 27dBm, the phenomenon of gain extension occurred.

From the results in the picture below, should I see 27dBm as the MOSFET being broken down? Can i see the breakdown phenomenon in the simulation as well?


thank you

 

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