I learned about current mirror that has the Reference Ideal Current Source , but there's new(or what i never seen) current mirror. How can I use this circuit.....?
And I can't design all the MOSFET(10 MOSFET) size (W/L) to satisfy the target values(DC gain Settling time ..etc). It's too complicated to analyze this circuit.
If you can, tell me the size of (W/L) or method to design all the size.....
Thank you for reading

 

So with current mirrors, the diode connected mosfet is the leader and the follower has an equivalent current with a gain that is the ratio of W/L between the two transistors.
In the circuit attached. M1 and M2 are the differential pair of the amplifier meaning they need to have the same W/L. M8 and M9 act as an active load to convert the differential gain to single ended gain and so should yet again have the same W/L. M3 and M4 are both diode connected and will make your calculations much easier if they have the same W/L. This means there are two opportunities for gain, the first being the gain of the differential pair itself, the second being for the ratio of M5/M3 and M6/M4. M10 and M7 are cascaded common gate amplifiers that could potentially influence gain, but really are more there to influence output impedance (they act as resistance multipliers).

The other properties should all fall together if you chose the right initial value for whatever W/L you chose first. Very high gain with low bias current generally makes the amplifier fast, provided intrinsic capacitances are low enough.

 

I8=4uA,
Choose the size of transistors, so that at a current equal to 2 uA (4/2), the gate voltage does not exceed the threshold voltage of transistors on a value of 100 mV. So you get almost the maximum gain.

 

Determination of the width W of the transistor.
I do not recommend to choose the channel length L of the transistor is the lowest possible. Look for the optimum.