I have been simulating a bjt of Silicon Carbide by using TCAD synopsis. I first simulate a structre by using different paper as reference and then aplying different physics models such as Drift-Diffusion models, Generation-Recombination models on structure. I have applied 2.5 volts at base and 20 volts at collector. I have then I-V curves of commen emitter bjt. But my problem is that my curves didn't start from origin but at very small voltage like 0.4 volts. can anyone give me the reason? I am also attaching the I-V curve graph so people can actually understand my problem

 

It looks like the simulation software starts from 0.4V.